Abbreviations

Device data abbreviations
amp	amplifier
atten	attenuator
a	anode
b	base
bi, bid	bidirectional
c	cathode
ca	common anode
cc	common cathode
comp	complement
d	drain
dg	dual gate
dtr	digital transistor (see codebook introduction)
enh	enhancement (mode - FETs)
fet	field effect transistor
fT	transition frequency
GaAsfet	Gallium Arsenide field effect transistor
g	gate
gnd	ground
gp	general purpose
hfe	small signal current gain
i/p	input
Id	drain current
Ig	gate current
Ir	reverse leakage current (diodes)
jfet	junction field effect transistor
MAG	maximum available gain
max	maximum
min	minimum
mmic	microwave minature integrated circuit
modamp	modular amplifier - an mmic amplifier
mosfet	metal oxide insulated gate fet
n-ch	n-channel fet (any type)
npn	npn bipolar transistor
o/p	output
p-ch	p-channel fet (any type)
pin	pin diode
pkg	package
pnp	pnp bipolar transistor
prot	protection, protected (as in mosfet gate)
res	resistor
s	source
ser	series
Si	silicon
substr	substrate
sw	switch or switching
tvs	transient voltage supressor
uni	unidirectional
Vce	collector - emitter voltage (maximum)
Vcc	collector supply voltage
Manufacturer abbreviations
Agi	Agilent (was HP)
CSC	Central Semiconductor Corp
Dio	Diodes Inc
Fch	Fairchild
HP	Hewlett-Packard (Now Agilent)
Inf	Infineon (was Siemens)
ITT	ITT Semiconductors
MC	Mini-Circuits
Mot	Motorola (now ON Semiconductors)
Nat	National Semiconductor
Nec	NEC
NJRC	New Japan Radio Co
ON	ON Semiconductors (was Motorola)
Phi	Philips
Roh	Rohm
SGS	SGS-Thompson
Sie	Siemens (now Infineon)
Sil	Siliconix (Vishay-Silliconix)
Tem	Temic Semiconductors
Tfk	Telefunken (Vishay-Telefunken)
Tok	Toko Inc.
Tosh	Toshiba
Vis	Vishay Semiconductor (was Gen Semi, Tfk, Sil etc)
Zet	Zetex